low forward voltage : v f (3) = 0.9v (typ.) fast reverse recovery time : t rr = 1.6ns (typ.) small total capacitance : c t = 0.9pf (typ.) marking: c3 maximum ratings ,single diode @t a =25 parameter symbol limits unit non-repetitive peak reverse voltage v rm 85 v peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 v forward continuous current i fm 300 ma average rectified output current i o 100 ma peak forward surge current @=1.0 s @=1.0s i fsm 2 a power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100ua 80 v reverse voltage leakage current i r v r =80v 0.5 ua forward voltage v f i f =100ma 1.2 v diode capacitance c d v r =0v , f=1mhz 3 pf reverse recovery time t r r i f =10ma 4 ns 1ss226 switching diodes features dimensions in inches and (millimeters) SOT-23 ? ? ? http://www.luguang.cn mail:lge@luguang.cn
typical characteristics 1ss226 switching diodes http://www.luguang.cn mail:lge@luguang.cn
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